Warning! This is the archived 1999 Fabweb site! Here is the latest site

In the IC Fabrication Experiment," ECE 344 students are given bare silicon wafers and the guidance to help them fabricate some simple devices and circuits on them.

The emphasis is on "guidance". The students do practically everything by themselves. The equipment is all manually operated so that when the students are finished, they will have a thorough grasp of what was done at every stage of the fabrication. Highly automated fab equipment is actually rather undesireable for education since the purpose here is to remove the mystery ICs often have for students. In ECE 344, the students can see the wafer during every step.


Here are cross sections of a P-channel Metal Oxide Semiconductor Field Effect Transistor(P-MOSFET) and an NPN Bipolar Junction Transistor (BJT) at several significant points during processing.
This is a basic overview of what happens during the ece344 process. Layers are not to scale. Also, silicon consumption during oxidation and undercutting during etching are not shown.

1. RCA Clean: Over an hour is spent cleaning a bare silicon wafer in preparation for the first oxidation. Except for a few parts per billion of phosphorus, the silicon is a near perfect crystal with all four valence electrons covalently bonded to neighbors. Phosphorus has 5 electrons in it's valence shell causing one of the electrons to be available for conduction of electricity. Since electrons were assigned a negative charge, this is called N-type silicon. All unintentional impurities must be kept at even lower levels.

2. Initial Oxidation: About 1500 Angstroms of silicon dioxide is grown on the wafer in an 1100 degree Celcius furnace with pure oxygen flowing. During part of the oxidation, hydrogen is injected into the furnace along with the oxygen to speed up the oxidation.

ECE 344 home page.
ECE 344 Fabrication Experiment ("recipe".)

This screen is maintained by Kevin Beernink - U of Illinois ECE Dept. - beernink@uiuc.edu
E-mail comments and suggestions to ece344@uiuc.edu or use the FEEDBACK FORM.

overview.html

Warning! This is the archived 1999 Fabweb site! Here is the latest site