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9. Remove the Borosilicate Glass: The borosilicate glass and any remaining elemental boron
which didn't diffuse into the silicon is removed using alternating etches in hydroflouric acid and a
mixture of nitric and sulfuric acid.
10. Boron Drive: Next, additional silicon dioxide is grown on the wafer as before in an
1100 degree Celcius furnace. The boron spreads out by diffusion during
this furnace operation, but the concentrations are still much higher than
that of the original phosphorus.
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