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13. PR3 (third photoresist step): A third photoresist process is employed to remove the oxide separating the "source" and "drain" regions of the soon to be Field Effect Transistors.

14. Gate Oxidation: A very thin oxide (300-500 angstroms) is then grown at 1,000 degrees Celcius.

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Warning! This is the archived 1999 Fabweb site! Here is the latest site