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Reference Texts
- Oxidation
- M. Atalla, E. Tannenbaum, E. J. Scheibner, "Stabilization of Si Surfaces by Thermally Grown Oxides," Bell System Tech. J., 38, 749 (May 1959). (Same as Bell Telephone Monograph 3254, see especially pp. 15 and 16.)
- E. Deal and A. S. Grove, "General Relationship for the Thermal Oxidation of Silicon," J.A.P., 36, 37770 (December 1965).
J. Frosch and L. Derick, "Surface Protection and Selective Masking During Diffusion in Si," J. Electrochem. Soc., l04, 547 (1957).
- Burger and Donovan, Fundamentals of Silicon Integrated Device Technology, Vol. 1, pp. 93- 98.
- Ghandhi, The Theory and Practice of Microelectronics, Ch. 6.
- Glaser/Subak-Sharpe, Integrated Circuit Engineering, Section 5.6.
- Anner, Planar Processing Primer, Ch 5.
- Four Point Probe
- Anner, Planar Processing Primer, Sections 3.4 - 3.11.
- Gibbons, "Ion Implantation in Semiconductors - Part I, Range Distribution Theory and Experiments," Proc. IEEE 56, (1968), p. 295.
- Ghandhi, Chapters 4 and 5.
- Bond and F. M. Smits, "Interference Microscope for Measurement of Extremely Thin Surface Layers," BSTJ, 35, 1209 (Sept. 1956). (Same as BT Monograph 3682.)
- Metal-Semiconductor Systems
- Biondi, Transistor Technology, 3, 1958, Chapter 7.
- Warner and Fordemwalt, eds., Integrated Circuits, Design Principles and Fabrication, 1965, pp. 307-309.
- P-N Junction Capacitance
- SEEC, Vol. 2, Section 5.4, pp. 93-96.
- Vacuum Technology
- Van Atta, Vacuum Science and Engineering, McGraw-Hill.
- Brunner and Batzer, Practical Vacuum Technique, Reinhold.
- Guthrie, Vacuum Technology, Wiley.
- Theoretical
- Smits, "Formation of Junction Structures by Solid State Diffusion," Proc. IRE, 43, 1049 (1958). (Same as BT Monograph 3136.)
- Diffusion
- D'Asaro, "Diffusion and Oxide Masking in Si by the Box Method," S.S.E., 1, 3 (1960). (Same as BT Monograph 3704.)
- Goldsmith, Olmstead, and Scott, Jr., “Boron Nitride as a Diffusion Source for Silicon," RCA Review, 28, 2, pp. 444-350 (June, 1967).
- Anner, Planar Processing Primer, Chapters 6 and 7.
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