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ece444:
Theory and Fabrication of Integrated Circuits
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Recipe:


  1. RCA Clean
  2. Initial Oxidation
  3. Photolithography Level 1
  4. Level 1 Etch
  5. Level 1 PR Removal
  6. Boron Predep
  7. BSG Etch
  8. Boron Drive
  9. Photolithography Level 2
  10. Level 2 Etch
  11. Level 2 PR Removal
  12. Phosphorus Predep
  13. PSG Etch
  14. Photolithography Level 3
  15. Level 3 Etch
  16. Level 3 PR Removal
  17. Gate Oxidation
  18. Photolithography Level 4
  19. Level 4 Etch
  20. Level 4 PR Removal
  21. Photolithography Level 5
  22. Evaporation
  23. Lift-off
  24. Anneal

The ECE444 laboratory uses a recipe which will yield working electronic devices if followed correctly.

Students are advised to read through the process procedures thoroughly so that they understand the process sequence. Extreme care and attention to detail will ensure the fabrication of working devices.

Fabrication of both bipolar and field effect devices on student wafers using diffusion for doping requires a compromise in the performance of both types of devices. In addition, time limitations also compromise electrical characteristics. So keep in mind that the wafers fabricated in lab will not exhibit ideal qualities!

 

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