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ece444:
Theory and Fabrication of Integrated Circuits
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Recipe:


  1. RCA Clean
  2. Initial Oxidation
  3. Photolithography Level 1
  4. Level 1 Etch
  5. Level 1 PR Removal
  6. Boron Predep
  7. BSG Etch
  8. Boron Drive
  9. Photolithography Level 2
  10. Level 2 Etch
  11. Level 2 PR Removal
  12. Phosphorus Predep
  13. PSG Etch
  14. Photolithography Level 3
  15. Level 3 Etch
  16. Level 3 PR Removal
  17. Gate Oxidation
  18. Photolithography Level 4
  19. Level 4 Etch
  20. Level 4 PR Removal
  21. Photolithography Level 5
  22. Evaporation
  23. Lift-off
  24. Anneal

Aluminum Evaporation

Aluminum will be evaporated onto the surface of the wafer to form low-resistance connections to the active devices.

Equipment

LDS 1820 Thermal Evaporator or Cooke CVE301 Thermal Evaporator

Supplies

LDS 1820

  • Demelloy (1%Si in Al alloy)
  • IPA
  • Blue wipers
  • Hi-vac grease

Cooke 301

  • (1) three inch piece of Al wire
  • IPA
  • Blue wipers
  • Hi-vac grease

Operating parameters

LDS 1820

  • Turbo cross over: mTorr
  • Evaporation pressure: Torr
  • Evaporation recipe:
  • Evaporation rate: Å/second
  • Total film thickness: Å

Cooke 301

  • Diffusion pump cross over: 80 microns
  • Evaporation pressure: 1 x 10-5 Torr
  • Filament current: 40 - 60 A
  • Evaporation time: 3 seconds after evaporation starts

Equipment/controls/tools locations

LDS 1820

  • Located behind diffusion furnace
  • Controls located in the rack to the right of the evaporator

Cooke 301

  • Located behind diffusion furnace

Operating precautions

Implosion Hazard

The Cooke 301 uses a glass bell jar that poses an implosion hazard. The pressure exerted on the bell jar by the atmosphere can be extreme. If the bell jar fails, the glass can potentially cause serious injuries.

Operating procedure

See Appendix B of the Lab Supplement.

 

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