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ece444:
Theory and Fabrication of Integrated Circuits
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Recipe:


  1. RCA Clean
  2. Initial Oxidation
  3. Photolithography Level 1
  4. Level 1 Etch
  5. Level 1 PR Removal
  6. Boron Predep
  7. BSG Etch
  8. Boron Drive
  9. Photolithography Level 2
  10. Level 2 Etch
  11. Level 2 PR Removal
  12. Phosphorus Predep
  13. PSG Etch
  14. Photolithography Level 3
  15. Level 3 Etch
  16. Level 3 PR Removal
  17. Gate Oxidation
  18. Photolithography Level 4
  19. Level 4 Etch
  20. Level 4 PR Removal
  21. Photolithography Level 5
  22. Evaporation
  23. Lift-off
  24. Anneal

Level 4 Photoresist Removal

Removal of photoresist prior to liftoff.

Equipment 

  • Solvent waste container
  • Microscope

Supplies

  • Acetone
  • IPA
  • DI water

Operating parameters

three 15 second acetone rinses

-or-

min plasma ash

Equipment/controls/tools locations

Room 50J

  • Solvent fume hood
  • Microscope

Operating precautions

Chemical hazard

PR, acetone, and ipa are volatile and flammable. Keep away from flame. Possible biological hazards: only use in a fume hood.

Operating procedure

  1. Initial PR Removal: Hold your wafer level over the waste acetone/IPA container (with the lid off) and squirt acetone on the wafer until it begins to flow off the edges. Let it dissolve the PR for 10-15 seconds before tossing the acetone into the waste container. Repeat until most of the PR is gone (~3 times).
  2. Strip off any remaining PR residue by following the standard degreasing procedure (Acetone, IPA, DI, IPA, N2 dry.)
  3. Inspect the wafer under a microscope for PR residue. Go back and degrease if necessary. Incomplete photoresist removal is the most common cause of furnace tube contamination. Please inspect wafers thoroughly.
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