P-MOSFETs

The ICS Instructions contain the basic procedures for making measurements. This screen is intended to point out things unique to using the PMOS model file.

Device Selection

Below are some guidelines for chosing which devices to measure for each of the Devices Under Test (DUTs). Normally, you will only have to fill in a single model since each requires probing 3 devices.

• large
  • Use the 20 μm gate oxide PMOSFET
• narrow
  • Use one of the left-most FETs in the bottom row of the pMOSFET array.
• short
  • Use the shortest channel gate oxide pMOSFET you can find that works. Hopefully, this will be in the top row of the array.
• cap perimeter
  • Use the "large" FET for this measurement. It doesn't really matter whether the Drain or Source is used for the CM(L) connection.
• cap area
  • Use the "narrow" FET for this measurement. It doesn't really matter whether the Drain or Source is used for the CM(L) connection.

Probe Assignments

• SMU1/probe1/CM(H)---->Substrate
• SMU2/probe2---->Drain
• SMU3/probe3---->Gate
• SMU4/probe4---->Source

Note: CM(L) will have to be connected to either the Drain (probe2) or Source (probe4) as needed to complete the measurements.